Methods of wet etching a self-assembled monolayer patterned substrate and metal patterned articles

Method of patterning a substrate are described including a method of providing a substrate comprising a metalized surface having a self-assembled monolayer patterned region and unpatterned region; and wet etching the metalized surface in a liquid etchant agitated with bubbling gas to remove metal fr...

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Bibliographische Detailangaben
Hauptverfasser:	FREY MATTHEW H, TOKIE JEFFREY H, ZU LIJUN, KANG MYUNGCHAN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	Method of patterning a substrate are described including a method of providing a substrate comprising a metalized surface having a self-assembled monolayer patterned region and unpatterned region; and wet etching the metalized surface in a liquid etchant agitated with bubbling gas to remove metal from the unpatterned regions to form a metal pattern. Also described are metal patterned article including an article comprising a substrate and an etched microcontact printed metal pattern disposed on the substrate wherein the pattern has a thickness of at least 100 nanometers and a pattern feature uniformity of at least 50% for an area of at least 25 cm2.