Method of making an insulated gate semiconductor device and structure

In one embodiment, a trench shield electrode layer is separated from a trench gate electrode by an inter-electrode dielectric layer. A conformal deposited dielectric layer is formed as part of a gate dielectric structure and further isolates the trench shield electrode from the trench gate electrode...

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Hauptverfasser:	AMEELE ERIC J, BURKE PETER A
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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