Uncooled infrared imaging element and manufacturing method thereof

Uncooled infrared imaging element and manufacturing method thereof

An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infra...

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Hauptverfasser: FUJIWARA IKUO, YAGI HITOSHI, SASAKI KEITA, ATSUTA MASAKI, FUNAKI HIDEYUKI, SUZUKI KAZUHIRO, HONDA HIROTO, ISHII KOICHI, OGATA MASAKO, UENO RISAKO, KWON HONAM
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator FUJIWARA IKUO
YAGI HITOSHI
SASAKI KEITA
ATSUTA MASAKI
FUNAKI HIDEYUKI
SUZUKI KAZUHIRO
HONDA HIROTO
ISHII KOICHI
OGATA MASAKO
UENO RISAKO
KWON HONAM
description An uncooled infrared imaging element includes a pixel region, a device region, and a support substrate. The pixel region includes heat-sensitive pixels. The heat-sensitive pixels are arranged in a matrix and change current-voltage characteristics thereof in accordance with receiving amounts of infrared. The device region includes at least one of a drive circuit and a readout circuit which includes a MOS transistor. The drive circuit drives the heat-sensitive pixels. The readout circuit detects signals of the heat-sensitive pixels. The support substrate is provided with a cavity region to be under pixel region and the MOS transistor.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Uncooled infrared imaging element and manufacturing method thereof
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