Pixel-level optical elements for uncooled infrared detector devices
Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optica...
Gespeichert in:
Hauptverfasser: | , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | FAGAN, III THOMAS P SCHIMERT THOMAS R SYLLAIOS ATHANASIOS J |
description | Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8610070B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8610070B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8610070B23</originalsourceid><addsrcrecordid>eNqNirEKAjEQBdNYiPoP-wMHUUGtPRRLQa2PsHmBwF42JPHw873CD7CagZml6e_xA-kEE4Q0t8hOCIIRqVUKWuidWFXgKaZQXJnFo4HbnDymyKhrswhOKjY_rgxdL8_-1iHrgJodI6ENr8fpsLX2aM-7_R_LF0KZMoA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Pixel-level optical elements for uncooled infrared detector devices</title><source>esp@cenet</source><creator>FAGAN, III THOMAS P ; SCHIMERT THOMAS R ; SYLLAIOS ATHANASIOS J</creator><creatorcontrib>FAGAN, III THOMAS P ; SCHIMERT THOMAS R ; SYLLAIOS ATHANASIOS J</creatorcontrib><description>Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; COLORIMETRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT ; MEASURING ; PHYSICS ; RADIATION PYROMETRY ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131217&DB=EPODOC&CC=US&NR=8610070B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131217&DB=EPODOC&CC=US&NR=8610070B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FAGAN, III THOMAS P</creatorcontrib><creatorcontrib>SCHIMERT THOMAS R</creatorcontrib><creatorcontrib>SYLLAIOS ATHANASIOS J</creatorcontrib><title>Pixel-level optical elements for uncooled infrared detector devices</title><description>Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>COLORIMETRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>RADIATION PYROMETRY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNirEKAjEQBdNYiPoP-wMHUUGtPRRLQa2PsHmBwF42JPHw873CD7CagZml6e_xA-kEE4Q0t8hOCIIRqVUKWuidWFXgKaZQXJnFo4HbnDymyKhrswhOKjY_rgxdL8_-1iHrgJodI6ENr8fpsLX2aM-7_R_LF0KZMoA</recordid><startdate>20131217</startdate><enddate>20131217</enddate><creator>FAGAN, III THOMAS P</creator><creator>SCHIMERT THOMAS R</creator><creator>SYLLAIOS ATHANASIOS J</creator><scope>EVB</scope></search><sort><creationdate>20131217</creationdate><title>Pixel-level optical elements for uncooled infrared detector devices</title><author>FAGAN, III THOMAS P ; SCHIMERT THOMAS R ; SYLLAIOS ATHANASIOS J</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8610070B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>COLORIMETRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>RADIATION PYROMETRY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>FAGAN, III THOMAS P</creatorcontrib><creatorcontrib>SCHIMERT THOMAS R</creatorcontrib><creatorcontrib>SYLLAIOS ATHANASIOS J</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FAGAN, III THOMAS P</au><au>SCHIMERT THOMAS R</au><au>SYLLAIOS ATHANASIOS J</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Pixel-level optical elements for uncooled infrared detector devices</title><date>2013-12-17</date><risdate>2013</risdate><abstract>Pixel-level monolithic optical element configurations for uncooled infrared detectors and focal plane arrays in which a monolithically integrated or fabricated optical element may be suspended over a microbolometer pixel membrane structure of an uncooled infrared detector element A monolithic optical element may be, for example, a polarizing or spectral filter element, an optically active filter element, or a microlens element that is structurally attached by an insulating interconnect to the existing metal interconnects such that the installation of the optical element substantially does not impact the thermal mass or thermal time constant of the microbolometer pixel structure, and such that it requires little if any additional device real estate area beyond the area originally consumed by the microbolometer pixel structure interconnects.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US8610070B2 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS COLORIMETRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT MEASURING PHYSICS RADIATION PYROMETRY SEMICONDUCTOR DEVICES TESTING |
title | Pixel-level optical elements for uncooled infrared detector devices |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T12%3A43%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=FAGAN,%20III%20THOMAS%20P&rft.date=2013-12-17&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8610070B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |