Capacitor integration at top-metal level with a protective cladding for copper surface protection

Capacitor integration at top-metal level with a protective cladding for copper surface protection

An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection cladding (109) for the copper metal (104b) of the top metal interconnect.

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Hauptverfasser: BURKE EDMUND, PAPA RAO SATYAVOLU SRINIVAS, ROST TIMOTHY ALAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator BURKE EDMUND
PAPA RAO SATYAVOLU SRINIVAS
ROST TIMOTHY ALAN
description An on-chip decoupling capacitor (106) and method of fabrication. The decoupling capacitor (106) is integrated at the top metal interconnect level (104) and includes surface protection cladding (109) for the copper metal (104b) of the top metal interconnect.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Capacitor integration at top-metal level with a protective cladding for copper surface protection
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