Electrochemical etching of semiconductors

Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.

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Hauptverfasser: REESE JASON A, HAMM GARY, ALLARDYCE GEORGE R
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creator REESE JASON A
HAMM GARY
ALLARDYCE GEORGE R
description Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8603314B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8603314B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8603314B23</originalsourceid><addsrcrecordid>eNrjZNB0zUlNLinKT85Izc1MTsxRSC1JzsjMS1fIT1MoBgnl56WUJpfkFxXzMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALMwNjY0MTJyNjIpQAAOS8KOE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Electrochemical etching of semiconductors</title><source>esp@cenet</source><creator>REESE JASON A ; HAMM GARY ; ALLARDYCE GEORGE R</creator><creatorcontrib>REESE JASON A ; HAMM GARY ; ALLARDYCE GEORGE R</creatorcontrib><description>Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.</description><language>eng</language><subject>APPARATUS THEREFOR ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131210&amp;DB=EPODOC&amp;CC=US&amp;NR=8603314B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131210&amp;DB=EPODOC&amp;CC=US&amp;NR=8603314B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>REESE JASON A</creatorcontrib><creatorcontrib>HAMM GARY</creatorcontrib><creatorcontrib>ALLARDYCE GEORGE R</creatorcontrib><title>Electrochemical etching of semiconductors</title><description>Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.</description><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0zUlNLinKT85Izc1MTsxRSC1JzsjMS1fIT1MoBgnl56WUJpfkFxXzMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALMwNjY0MTJyNjIpQAAOS8KOE</recordid><startdate>20131210</startdate><enddate>20131210</enddate><creator>REESE JASON A</creator><creator>HAMM GARY</creator><creator>ALLARDYCE GEORGE R</creator><scope>EVB</scope></search><sort><creationdate>20131210</creationdate><title>Electrochemical etching of semiconductors</title><author>REESE JASON A ; HAMM GARY ; ALLARDYCE GEORGE R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8603314B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS</topic><toplevel>online_resources</toplevel><creatorcontrib>REESE JASON A</creatorcontrib><creatorcontrib>HAMM GARY</creatorcontrib><creatorcontrib>ALLARDYCE GEORGE R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>REESE JASON A</au><au>HAMM GARY</au><au>ALLARDYCE GEORGE R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Electrochemical etching of semiconductors</title><date>2013-12-10</date><risdate>2013</risdate><abstract>Semiconductors are electrochemically etched in solutions containing sources of bifluoride and nickel ions. The electrochemical etching may form pores in the surface of the semiconductor in the nanometer range. The etched semiconductor is then nickel plated.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
title Electrochemical etching of semiconductors
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-02T20%3A23%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=REESE%20JASON%20A&rft.date=2013-12-10&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8603314B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true