Measuring bias temperature instability induced ring oscillator frequency degradation

A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in th...

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Hauptverfasser:	BROCHU, JR. DAVID G, IOANNOU DIMITRIS P, MERRILL TRAVIS S, MITTL STEVEN W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRONIC CIRCUITRY ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS PULSE TECHNIQUE TESTING
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creator	BROCHU, JR. DAVID G IOANNOU DIMITRIS P MERRILL TRAVIS S MITTL STEVEN W
description	A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).
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subjects	BASIC ELECTRONIC CIRCUITRY ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS PULSE TECHNIQUE TESTING
title	Measuring bias temperature instability induced ring oscillator frequency degradation
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