Bipolar junction transistor with layout controlled base and associated methods of manufacturing

Bipolar junction transistor with layout controlled base and associated methods of manufacturing

The present technology discloses a bipolar junction transistor (BJT) device integrated into a semiconductor substrate. The BJT device comprises a collector, a base and an emitter. The collector is of a first doping type on the substrate; the base is of a second doping type in the collector from the...

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1. Verfasser: JUNG JEESUNG
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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description The present technology discloses a bipolar junction transistor (BJT) device integrated into a semiconductor substrate. The BJT device comprises a collector, a base and an emitter. The collector is of a first doping type on the substrate; the base is of a second doping type in the collector from the top surface of the semiconductor device and the base has a base depth; and the emitter is of a first doping type in the base from the top surface of the semiconductor device. The base depth is controlled by adjusting a layout width in forming the base.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Bipolar junction transistor with layout controlled base and associated methods of manufacturing
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