Manufacturing method of semiconductor device

A manufacturing method of a semiconductor device is provided which can improve the performance of the semiconductor device. Ion implantation is applied to nMIS regions 1A and 1B and pMIS regions 1C and 1D of a semiconductor substrate 1 with offset spacers formed over sidewalls of gate electrodes GE1...

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1. Verfasser: KANNO ITARU
Format: Patent
Sprache:eng
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