Method of determining pressure to apply to wafers during a CMP
A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first an...
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| creator | SAMPSON RONALD K KLEEMEIER WALTER ZHANG JOHN H |
| description | A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference. |
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The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC DIGITAL DATA PROCESSING ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; PHYSICS ; POLISHING ; TRANSPORTING</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131015&DB=EPODOC&CC=US&NR=8560111B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131015&DB=EPODOC&CC=US&NR=8560111B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SAMPSON RONALD K</creatorcontrib><creatorcontrib>KLEEMEIER WALTER</creatorcontrib><creatorcontrib>ZHANG JOHN H</creatorcontrib><title>Method of determining pressure to apply to wafers during a CMP</title><description>A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. 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The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | CALCULATING COMPUTING COUNTING DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC DIGITAL DATA PROCESSING FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS PHYSICS POLISHING TRANSPORTING |
| title | Method of determining pressure to apply to wafers during a CMP |
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