Output buffer

According to one embodiment, a clamp transistor is inserted in series between a P-channel field effect transistor and an N-channel field effect transistor and an intermediate level between a high potential supplied to a source of the P-channel field effect transistor and a low potential supplied to...

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Bibliographische Detailangaben
1. Verfasser: SHIMIZU YUUI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:According to one embodiment, a clamp transistor is inserted in series between a P-channel field effect transistor and an N-channel field effect transistor and an intermediate level between a high potential supplied to a source of the P-channel field effect transistor and a low potential supplied to a source of the N-channel field effect transistor is input into a gate of the clamp transistor to clamp a drain potential of the N-channel field effect transistor.