Aluminum indium antimonide focal plane array

Aluminum indium antimonide focal plane array

In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: BORNFREUND RICHARD E, BARTON JEFFREY B
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator BORNFREUND RICHARD E
BARTON JEFFREY B
description In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8552479B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8552479B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8552479B23</originalsourceid><addsrcrecordid>eNrjZNBxzCnNzcwrzVXIzEvJBFKJeSWZufl5mSmpCmn5yYk5CgU5iXmpColFRYmVPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTYwtTUyMTc0snImAglAFhbKb8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Aluminum indium antimonide focal plane array</title><source>esp@cenet</source><creator>BORNFREUND RICHARD E ; BARTON JEFFREY B</creator><creatorcontrib>BORNFREUND RICHARD E ; BARTON JEFFREY B</creatorcontrib><description>In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x&lt;y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131008&amp;DB=EPODOC&amp;CC=US&amp;NR=8552479B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20131008&amp;DB=EPODOC&amp;CC=US&amp;NR=8552479B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BORNFREUND RICHARD E</creatorcontrib><creatorcontrib>BARTON JEFFREY B</creatorcontrib><title>Aluminum indium antimonide focal plane array</title><description>In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x&lt;y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNBxzCnNzcwrzVXIzEvJBFKJeSWZufl5mSmpCmn5yYk5CgU5iXmpColFRYmVPAysaYk5xam8UJqbQcHNNcTZQze1ID8-tbggMTk1L7UkPjTYwtTUyMTc0snImAglAFhbKb8</recordid><startdate>20131008</startdate><enddate>20131008</enddate><creator>BORNFREUND RICHARD E</creator><creator>BARTON JEFFREY B</creator><scope>EVB</scope></search><sort><creationdate>20131008</creationdate><title>Aluminum indium antimonide focal plane array</title><author>BORNFREUND RICHARD E ; BARTON JEFFREY B</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8552479B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>BORNFREUND RICHARD E</creatorcontrib><creatorcontrib>BARTON JEFFREY B</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BORNFREUND RICHARD E</au><au>BARTON JEFFREY B</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Aluminum indium antimonide focal plane array</title><date>2013-10-08</date><risdate>2013</risdate><abstract>In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x&lt;y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US8552479B2
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Aluminum indium antimonide focal plane array
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-24T23%3A05%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=BORNFREUND%20RICHARD%20E&rft.date=2013-10-08&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8552479B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true