Methods of forming 3-D semiconductor devices with a nanowire gate structure wherein the nanowire gate structure is formed after source/drain formation

In one example, the method disclosed herein includes forming a fin comprised of a semiconducting material, wherein the fin has a first, as-formed cross-sectional configuration, forming a sacrificial gate structure above the fin, forming sidewall spacers adjacent at least a portion of the sacrificial...

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Bibliographische Detailangaben

Hauptverfasser:	CAI, JR. XIUYU, CHENG KANGGUO, KHAKIFIROOZ ALI, XIE RUILONG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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