Silicon carbide vertical-sidewall dual-mesa static induction transistor

A vertical-sidewall dual-mesa static induction transistor (SIT) structure includes a silicon carbide substrate having a layer arrangement formed thereon. Laterally spaced ion implanted gate regions are defined in the layer arrangement. Source regions are defined in the layer arrangement. Each of the...

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Bibliographische Detailangaben

Hauptverfasser:	ODEKIRK BRUCE, THOMPSON, JR. DOUGLAS C, CHAI FRANCIS K, MAXWELL EDWARD WILLIAM
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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