High-K metal gate CMOS

A method of forming a semiconductor device is provided that includes forming a Ge-containing layer atop a p-type device regions of the substrate. Thereafter, a first dielectric layer is formed in a second portion of a substrate, and a second dielectric layer is formed overlying the first dielectric...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MO RENEE T, CHUDZIK MICHAEL P, NARAYANAN VIJAY, BU HUIMING, HENSON WILLIAM K, KHARE MUKESH V
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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