Resistor and manufacturing method thereof

Resistor and manufacturing method thereof

A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region,...

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Hauptverfasser: LIN CHUN-HSIEN, HSU SHIHIEH, WANG YAOANG, PAI CHI-HORN, YANG JIE-NING, TSENG CHI-SHENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRICITY
RESISTORS
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creator LIN CHUN-HSIEN
HSU SHIHIEH
WANG YAOANG
PAI CHI-HORN
YANG JIE-NING
TSENG CHI-SHENG
description A manufacturing method for a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, respectively forming a transistor having a dummy gate in the transistor region and a resistor in the resistor region, removing the dummy gate and portions of the resistor to form a first trench in the transistor and two second trenches in the resistor, forming at least a high-k gate dielectric layer in the first trench and the second trenches, and forming a metal gate in the first trench and metal structures respectively in the second trenches.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRICITY
RESISTORS
title Resistor and manufacturing method thereof
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