Semiconductor device and method of manufacturing the same

A semiconductor device includes a first transistor including a first source/drain region and a first sidewall spacer, and a second transistor including a second source/drain region and a second sidewall spacer, the first sidewall spacer has a first width and the second sidewall spacer has a second w...

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Hauptverfasser: SATOH SHIGEO, USUJIMA AKIHIRO
Format: Patent
Sprache:eng
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