Method for obtaining a layer of AlN having substantially vertical sides

A method for producing a layer of AlN having substantially vertical sides relative to the surface of a substrate, including: the formation of an AlN growth layer on a substrate, the deposition of the AlN layer, on at least said growth layer, the formation of a mask layer over the AlN layer, at least...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEFEVRE AUDE, AID MARC, DEFAY EMMANUEL, PARAT GUY-MICHEL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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