Nonvolatile memory device and related programming method

A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selec...

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Hauptverfasser: PARK KI TAE, KANG MYOUNG GON
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creator PARK KI TAE
KANG MYOUNG GON
description A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8446766B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8446766B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8446766B23</originalsourceid><addsrcrecordid>eNrjZLDwy88ry89JLMnMSVXITc3NL6pUSEkty0xOVUjMS1EoSgVKpaYoFBTlpxcl5uZm5qUDVZVk5KfwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALExMzczMzJyNjIpQAAOXTLo8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Nonvolatile memory device and related programming method</title><source>esp@cenet</source><creator>PARK KI TAE ; KANG MYOUNG GON</creator><creatorcontrib>PARK KI TAE ; KANG MYOUNG GON</creatorcontrib><description>A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.</description><language>eng</language><subject>CALCULATING ; COMPUTING ; COUNTING ; ELECTRIC DIGITAL DATA PROCESSING ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130521&amp;DB=EPODOC&amp;CC=US&amp;NR=8446766B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20130521&amp;DB=EPODOC&amp;CC=US&amp;NR=8446766B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK KI TAE</creatorcontrib><creatorcontrib>KANG MYOUNG GON</creatorcontrib><title>Nonvolatile memory device and related programming method</title><description>A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.</description><subject>CALCULATING</subject><subject>COMPUTING</subject><subject>COUNTING</subject><subject>ELECTRIC DIGITAL DATA PROCESSING</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLDwy88ry89JLMnMSVXITc3NL6pUSEkty0xOVUjMS1EoSgVKpaYoFBTlpxcl5uZm5qUDVZVk5KfwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALExMzczMzJyNjIpQAAOXTLo8</recordid><startdate>20130521</startdate><enddate>20130521</enddate><creator>PARK KI TAE</creator><creator>KANG MYOUNG GON</creator><scope>EVB</scope></search><sort><creationdate>20130521</creationdate><title>Nonvolatile memory device and related programming method</title><author>PARK KI TAE ; KANG MYOUNG GON</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8446766B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>CALCULATING</topic><topic>COMPUTING</topic><topic>COUNTING</topic><topic>ELECTRIC DIGITAL DATA PROCESSING</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>PARK KI TAE</creatorcontrib><creatorcontrib>KANG MYOUNG GON</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PARK KI TAE</au><au>KANG MYOUNG GON</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Nonvolatile memory device and related programming method</title><date>2013-05-21</date><risdate>2013</risdate><abstract>A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.</abstract><oa>free_for_read</oa></addata></record>
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subjects CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
INFORMATION STORAGE
PHYSICS
STATIC STORES
title Nonvolatile memory device and related programming method
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T11%3A51%3A21IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=PARK%20KI%20TAE&rft.date=2013-05-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8446766B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true