Asymmetrically recessed high-power and high-gain ultra-short gate HEMT device

A high-power and high-gain ultra-short gate HEMT device has exceptional gain and an exceptionally high breakdown voltage provided by an increased width asymmetric recess for the gate electrode, by a composite channel layer including a thin indium arsenide layer embedded in the indium gallium arsenid...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KONG WENDELL, XU DONG, CHAO PANEANE, MOHNKERN LEE M, YANG XIAOPING S, SMITH PHILLIP M
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!