Substrate etching method and system

The etching method includes etching the silicon oxide film by supplying a halogen-containing gas and a basic gas to the substrate so that the silicon oxide film is chemically reacted with the halogen-containing gas and the basic gas to generate a condensation layer; etching silicon by supplying a si...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	UGAJIN HAJIME
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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