Forming a phase change memory with an ovonic threshold switch

A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.

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1. Verfasser:	DENNISON CHARLES H
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	DENNISON CHARLES H
description	A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8440535B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8440535B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8440535B23</originalsourceid><addsrcrecordid>eNrjZLB1yy_KzcxLV0hUKMhILE5VSM5IzEtPVchNzc0vqlQozyzJUEjMU8gvy8_LTFYoyShKLc7Iz0lRKAbKJGfwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALExMDU2NTJyNjIpQAAKkTL8s</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Forming a phase change memory with an ovonic threshold switch</title><source>esp@cenet</source><creator>DENNISON CHARLES H</creator><creatorcontrib>DENNISON CHARLES H</creatorcontrib><description>A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130514&DB=EPODOC&CC=US&NR=8440535B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130514&DB=EPODOC&CC=US&NR=8440535B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DENNISON CHARLES H</creatorcontrib><title>Forming a phase change memory with an ovonic threshold switch</title><description>A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLB1yy_KzcxLV0hUKMhILE5VSM5IzEtPVchNzc0vqlQozyzJUEjMU8gvy8_LTFYoyShKLc7Iz0lRKAbKJGfwMLCmJeYUp_JCaW4GBTfXEGcP3dSC_PjU4oLE5NS81JL40GALExMDU2NTJyNjIpQAAKkTL8s</recordid><startdate>20130514</startdate><enddate>20130514</enddate><creator>DENNISON CHARLES H</creator><scope>EVB</scope></search><sort><creationdate>20130514</creationdate><title>Forming a phase change memory with an ovonic threshold switch</title><author>DENNISON CHARLES H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8440535B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>DENNISON CHARLES H</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DENNISON CHARLES H</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Forming a phase change memory with an ovonic threshold switch</title><date>2013-05-14</date><risdate>2013</risdate><abstract>A phase change memory may include an ovonic threshold switch formed over an cyanic memory. In one embodiment, the switch includes a chalcogenide layer that overlaps an underlying electrode. Then, edge damage, due to etching the chalcogenide layer, may be isolated to reduce leakage current.</abstract><oa>free_for_read</oa></addata></record>
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Forming a phase change memory with an ovonic threshold switch
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T07%3A35%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DENNISON%20CHARLES%20H&rft.date=2013-05-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8440535B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true