Abrasive compounds for semiconductor planarization
A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 mum or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by vol...
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| creator | CHINONE KANSHI |
| description | A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 mum or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 mum or less. The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed. |
| format | Patent |
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The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRUSHING, PULVERISING, OR DISINTEGRATING ; CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE ; METALLURGY ; MILLING GRAIN ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; PERFORMING OPERATIONS ; PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL ; POLISHES ; POLISHING ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; PREPARATION OF CARBON BLACK ; PREPARATORY TREATMENT OF GRAIN FOR MILLING ; SEMICONDUCTOR DEVICES ; SEPARATION ; SKI WAXES ; TOOLS FOR GRINDING, BUFFING, OR SHARPENING ; TRANSPORTING ; TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS,TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130514&DB=EPODOC&CC=US&NR=8439995B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130514&DB=EPODOC&CC=US&NR=8439995B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CHINONE KANSHI</creatorcontrib><title>Abrasive compounds for semiconductor planarization</title><description>A polishing slurry for semiconductor planarization containing cerium oxide particles and water, wherein the content of the cerium oxide particles having a diameter of 3 mum or more is 500 ppm or less (weight ratio) in a solid, preferably 100 ppm or less and it is more preferable that D99 (99% by volume of the whole particles in polishing slurry) of the cerium oxide particles is 1 mum or less. 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The polishing slurry can reduce the generation of scratches, and can polish a surface of the semiconductor substrate in the wiring formation process of semiconductor device precisely at a high speed.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY CRUSHING, PULVERISING, OR DISINTEGRATING CRUSHING, PULVERISING, OR DISINTEGRATING IN GENERAL DRESSING OR CONDITIONING OF ABRADING SURFACES DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE METALLURGY MILLING GRAIN MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PERFORMING OPERATIONS PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL POLISHES POLISHING POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH PREPARATION OF CARBON BLACK PREPARATORY TREATMENT OF GRAIN FOR MILLING SEMICONDUCTOR DEVICES SEPARATION SKI WAXES TOOLS FOR GRINDING, BUFFING, OR SHARPENING TRANSPORTING TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS,TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES |
| title | Abrasive compounds for semiconductor planarization |
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