Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition

A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a requi...

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Hauptverfasser: LIANG MUH-WANG, LEE SHENG-LANG, HUANG JEN-RONG, DU CHENUNG, CHANG CHIA-HAO
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creator LIANG MUH-WANG
LEE SHENG-LANG
HUANG JEN-RONG
DU CHENUNG
CHANG CHIA-HAO
description A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and Halpha and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and Halpha within an allowed range of a target value for improving film depositing rate.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Method for depositing microcrystalline silicon and monitor device of plasma enhanced deposition
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