Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same

In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) formi...

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1. Verfasser: HERNER S. BRAD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HERNER S. BRAD
description In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. Numerous other aspects are provided.
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BRAD</creatorcontrib><description>In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. 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BRAD</creatorcontrib><title>Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same</title><description>In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. 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BRAD</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8431492B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HERNER S. BRAD</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HERNER S. BRAD</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same</title><date>2013-04-30</date><risdate>2013</risdate><abstract>In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. Numerous other aspects are provided.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Memory cell that includes a sidewall collar for pillar isolation and methods of forming the same
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