Semiconductor storage device

To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is suppl...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	ITOH KIYOO, ITO KENCHI, TAKEMURA RIICHIRO, KAWAHARA TAKAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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