Semiconductor storage device
To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is suppl...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | ITOH KIYOO ITO KENCHI TAKEMURA RIICHIRO KAWAHARA TAKAYUKI |
| description | To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8427864B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8427864B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8427864B23</originalsourceid><addsrcrecordid>eNrjZJAJTs3NTM7PSylNLskvUigGEonpqQopqWWZyak8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjCxMjcwszEyciYCCUAgnEj5w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor storage device</title><source>esp@cenet</source><creator>ITOH KIYOO ; ITO KENCHI ; TAKEMURA RIICHIRO ; KAWAHARA TAKAYUKI</creator><creatorcontrib>ITOH KIYOO ; ITO KENCHI ; TAKEMURA RIICHIRO ; KAWAHARA TAKAYUKI</creatorcontrib><description>To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.</description><language>eng</language><subject>ELECTRICITY ; INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130423&DB=EPODOC&CC=US&NR=8427864B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130423&DB=EPODOC&CC=US&NR=8427864B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ITOH KIYOO</creatorcontrib><creatorcontrib>ITO KENCHI</creatorcontrib><creatorcontrib>TAKEMURA RIICHIRO</creatorcontrib><creatorcontrib>KAWAHARA TAKAYUKI</creatorcontrib><title>Semiconductor storage device</title><description>To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.</description><subject>ELECTRICITY</subject><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAJTs3NTM7PSylNLskvUigGEonpqQopqWWZyak8DKxpiTnFqbxQmptBwc01xNlDN7UgPz61uCAxOTUvtSQ-NNjCxMjcwszEyciYCCUAgnEj5w</recordid><startdate>20130423</startdate><enddate>20130423</enddate><creator>ITOH KIYOO</creator><creator>ITO KENCHI</creator><creator>TAKEMURA RIICHIRO</creator><creator>KAWAHARA TAKAYUKI</creator><scope>EVB</scope></search><sort><creationdate>20130423</creationdate><title>Semiconductor storage device</title><author>ITOH KIYOO ; ITO KENCHI ; TAKEMURA RIICHIRO ; KAWAHARA TAKAYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8427864B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>ELECTRICITY</topic><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>ITOH KIYOO</creatorcontrib><creatorcontrib>ITO KENCHI</creatorcontrib><creatorcontrib>TAKEMURA RIICHIRO</creatorcontrib><creatorcontrib>KAWAHARA TAKAYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ITOH KIYOO</au><au>ITO KENCHI</au><au>TAKEMURA RIICHIRO</au><au>KAWAHARA TAKAYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor storage device</title><date>2013-04-23</date><risdate>2013</risdate><abstract>To write information on a memory cell of SPRAM formed of an MOS transistor and a tunnel magnetoresistive element, the memory cell is supplied with a current in a direction opposite to a direction of a current required for writing the information on the memory cell, and then, the memory cell is supplied with a current required for writing. In this manner, even when the same information is sequentially written on the memory cell, since the currents in the two directions are caused to flow in pairs in the tunnel magnetoresistive element of the memory cell each time information is rewritten, deterioration of a film that forms the tunnel magnetoresistive element can be suppressed. Therefore, reliability of the SPRAM can be improved.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US8427864B2 |
| source | esp@cenet |
| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Semiconductor storage device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T06%3A16%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=ITOH%20KIYOO&rft.date=2013-04-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8427864B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |