Semiconductor device and method of patterning resin insulation layer on substrate of the same

Semiconductor device and method of patterning resin insulation layer on substrate of the same

In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KATOH KAZUHITO, TOMISAKA MANABU, AKAMATSU KAZUO, TAI AKIRA, FUKUDA YUTAKA, KAMEYAMA MICHIO, FUKAYA TERUKAZU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a method of manufacturing a semiconductor device, an electrode layer is formed on a surface of a semiconductor substrate, and a resin insulation layer is formed on the surface of the semiconductor substrate so that the electrode layer can be covered with the resin insulation layer. A tapered hole is formed in the insulation layer by using a tool bit having a rake angle of zero or a negative value. The tapered hole has an opening defined by the insulation layer, a bottom defined by the electrode layer, and a side wall connecting the opening to the bottom.