Multi-semiconductor material vertical memory strings, strings of memory cells having individually biasable channel regions, memory arrays incorporating such strings, and methods of accessing and forming the same

Multi-semiconductor vertical memory strings, strings of memory cells having individually biasable channel regions, arrays incorporating such strings and methods for forming and accessing such strings are provided. For example non-volatile memory devices are disclosed that utilize NAND strings of ser...

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1. Verfasser:	FISHBURN FRED
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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