Transistors having argon gate implants and methods of forming the same

Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact wi...

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Hauptverfasser:	SRIVIDYA CANCHEEPURAM V, MATHEW SURAJ, GEALY DAN
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
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creator	SRIVIDYA CANCHEEPURAM V MATHEW SURAJ GEALY DAN
description	Transistors are provided including first and second source/drain regions, a channel region and a gate stack having a first gate dielectric over a substrate, the first gate dielectric having a dielectric constant higher than a dielectric constant of silicon dioxide, and a metal material in contact with the first gate dielectric, the metal material being doped with an inert element. Integrated circuits including the transistors and methods of forming the transistors are also provided.
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title	Transistors having argon gate implants and methods of forming the same
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