Grid transparency and grid hole pattern control for ion beam uniformity

A design process for varying hole locations or sizes or both in an ion beam grid includes identifying a control grid to be modified; obtaining a change factor for the grid pattern; and using the change factor to generate a new grid pattern. The change factor is one or both of a hole location change...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SIEGFRIED DANIEL E, KAMEYAMA IKUYA
Format: Patent
Sprache:eng
Schlagworte:
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