Removal of masking material
Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be compris...
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creator | KHOJASTEH MAHMOUD AFZALI-ARDAKANI ALI NUNES RONALD W TOTIR GEORGE GABRIEL COOPER EMANUEL ISRAEL |
description | Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8367555B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8367555B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8367555B23</originalsourceid><addsrcrecordid>eNrjZJAOSs3NL0vMUchPU8hNLM7OzEsH0iWpRZmJOTwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402MLYzNzU1NTJyJgIJQAt3SMm</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Removal of masking material</title><source>esp@cenet</source><creator>KHOJASTEH MAHMOUD ; AFZALI-ARDAKANI ALI ; NUNES RONALD W ; TOTIR GEORGE GABRIEL ; COOPER EMANUEL ISRAEL</creator><creatorcontrib>KHOJASTEH MAHMOUD ; AFZALI-ARDAKANI ALI ; NUNES RONALD W ; TOTIR GEORGE GABRIEL ; COOPER EMANUEL ISRAEL</creatorcontrib><description>Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ; TECHNICAL SUBJECTS COVERED BY FORMER USPC ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130205&DB=EPODOC&CC=US&NR=8367555B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130205&DB=EPODOC&CC=US&NR=8367555B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHOJASTEH MAHMOUD</creatorcontrib><creatorcontrib>AFZALI-ARDAKANI ALI</creatorcontrib><creatorcontrib>NUNES RONALD W</creatorcontrib><creatorcontrib>TOTIR GEORGE GABRIEL</creatorcontrib><creatorcontrib>COOPER EMANUEL ISRAEL</creatorcontrib><title>Removal of masking material</title><description>Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOSs3NL0vMUchPU8hNLM7OzEsH0iWpRZmJOTwMrGmJOcWpvFCam0HBzTXE2UM3tSA_PrW4IDE5NS-1JD402MLYzNzU1NTJyJgIJQAt3SMm</recordid><startdate>20130205</startdate><enddate>20130205</enddate><creator>KHOJASTEH MAHMOUD</creator><creator>AFZALI-ARDAKANI ALI</creator><creator>NUNES RONALD W</creator><creator>TOTIR GEORGE GABRIEL</creator><creator>COOPER EMANUEL ISRAEL</creator><scope>EVB</scope></search><sort><creationdate>20130205</creationdate><title>Removal of masking material</title><author>KHOJASTEH MAHMOUD ; AFZALI-ARDAKANI ALI ; NUNES RONALD W ; TOTIR GEORGE GABRIEL ; COOPER EMANUEL ISRAEL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8367555B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><toplevel>online_resources</toplevel><creatorcontrib>KHOJASTEH MAHMOUD</creatorcontrib><creatorcontrib>AFZALI-ARDAKANI ALI</creatorcontrib><creatorcontrib>NUNES RONALD W</creatorcontrib><creatorcontrib>TOTIR GEORGE GABRIEL</creatorcontrib><creatorcontrib>COOPER EMANUEL ISRAEL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHOJASTEH MAHMOUD</au><au>AFZALI-ARDAKANI ALI</au><au>NUNES RONALD W</au><au>TOTIR GEORGE GABRIEL</au><au>COOPER EMANUEL ISRAEL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Removal of masking material</title><date>2013-02-05</date><risdate>2013</risdate><abstract>Methods for removing a masking material, for example, a photoresist, and electronic devices formed by removing a masking material are presented. For example, a method for removing a masking material includes contacting the masking material with a solution comprising cerium. The cerium may be comprised in a salt. The salt may be cerium ammonium nitrate.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS |
title | Removal of masking material |
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