Methods for forming all tungsten contacts and lines

Methods for forming all tungsten contacts and lines

Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten...

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Hauptverfasser: LEVY KARL B, HUMAYUN RAASHINA, ASHTIANI KAIHAN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator LEVY KARL B
HUMAYUN RAASHINA
ASHTIANI KAIHAN
description Novel low-resistivity tungsten film stack schemes and methods for depositing them are provided. The film stacks include a mixed tungsten/tungsten-containing compound (e.g., WC) layer as a base for deposition of tungsten nucleation and/or bulk layers. According to various embodiments, these tungsten rich layers may be used as barrier and/or adhesion layers in tungsten contact metallization and bitlines. Deposition of the tungsten-rich layers involves exposing the substrate to a halogen-free organometallic tungsten precursor. The mixed tungsten/tungsten carbide layer is a thin, low resistivity film with excellent adhesion and a good base for subsequent tungsten plug or line formation.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Methods for forming all tungsten contacts and lines
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