Resist feature and removable spacer pitch doubling patterning method for pillar structures

A method of making a semiconductor device includes forming a layer over a substrate, forming a plurality of spaced apart features of imagable material over the layer, forming sidewall spacers on the plurality of features and filling a space between a first sidewall spacer on a first feature and a se...

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Bibliographische Detailangaben
Hauptverfasser: RADIGAN STEVEN J, CHEN YUNG-TIN
Format: Patent
Sprache:eng
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