Method for forming a nickelsilicide FUSI gate

Ni3Si2 FUSI gates can be formed inter alia by further reaction of NiSi/Ni2Si gate stacks. Ni3Si2 behaves similarly to NiSi in terms of work function values, and of modulation with dopants on SiO2, in contrast to Ni-rich silicides which have significantly higher work function values on HfSixOy and ne...

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1. Verfasser:	KITTL JORGE ADRIAN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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