Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same

Slurry composition for chemical-mechanical polishing and method of chemical-mechanical polishing with the same

Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO43− or HPO42− and a second polishing inhibitor, which may be a C2-C10 hydrocarbon comp...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HAN SANG-YEOB, LEE JONG-WON, HONG CHANG-KI
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Provided may be a slurry composition for chemical mechanical polishing (CMP) and a CMP method using the same. For example, the slurry composition may include a first polishing inhibitor including at least one of PO43− or HPO42− and a second polishing inhibitor, which may be a C2-C10 hydrocarbon compound having -SO3H or -OSO3H. By using the slurry composition for CMP and a CMP method using the same, increased selectivity to SiN may be obtained.