Method of inspecting memory cell

A method of inspecting a memory cell is provided, including: providing a semiconductor substrate with a capacitor formed therein and a transistor formed thereon, wherein the transistor is electrically connected to the capacitor; inspecting a size of a top surface of the capacitor and a pitch between the capacitor and the transistor electrically connected thereto by an optical measuring system, thereby obtaining a first measurement data and a second measurement data; and comparing the first and second measurement data with designed specifications of the capacitor and transistor, thereby determining functionality of the memory cell comprising the capacitor and the transistor.