Methods of fabricating flash memory devices having shared sub active regions

Flash memory devices include a pair of elongated, closely spaced-apart main active regions in a substrate. A sub active region is also provided in the substrate, extending between the pair of elongated, closely spaced-apart main active regions. A bit line contact plug is provided on, and electricall...

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Hauptverfasser:	CHOI JUNG-DAL, SEL JONG-SUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	CHOI JUNG-DAL SEL JONG-SUN
description	Flash memory devices include a pair of elongated, closely spaced-apart main active regions in a substrate. A sub active region is also provided in the substrate, extending between the pair of elongated, closely spaced-apart main active regions. A bit line contact plug is provided on, and electrically contacting, the sub active region and being at least as wide as the sub active region. An elongated bit line is provided on, and electrically contacting, the bit line contact plug remote from the sub active region.
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title	Methods of fabricating flash memory devices having shared sub active regions
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