Method and apparatus for electroplating

An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second catho...

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Hauptverfasser: HE ZHIAN, PONNUSWAMY THOMAS, MAYER STEVEN, BRELING PATRICK, REID JONATHAN, BUCKALEW BRYAN, IBARRETA GLENN, PARK SEYANG, VARADARAJAN SESHASAYEE, PENNINGTON BRYAN
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creator HE ZHIAN
PONNUSWAMY THOMAS
MAYER STEVEN
BRELING PATRICK
REID JONATHAN
BUCKALEW BRYAN
IBARRETA GLENN
PARK SEYANG
VARADARAJAN SESHASAYEE
PENNINGTON BRYAN
description An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8308931B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8308931B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8308931B23</originalsourceid><addsrcrecordid>eNrjZFD3TS3JyE9RSMwD4oKCxKLEktJihbT8IoXUnNTkkqL8gpzEksy8dB4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abGFsYGFpbOhkZEyEEgBlLyfp</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Method and apparatus for electroplating</title><source>esp@cenet</source><creator>HE ZHIAN ; PONNUSWAMY THOMAS ; MAYER STEVEN ; BRELING PATRICK ; REID JONATHAN ; BUCKALEW BRYAN ; IBARRETA GLENN ; PARK SEYANG ; VARADARAJAN SESHASAYEE ; PENNINGTON BRYAN</creator><creatorcontrib>HE ZHIAN ; PONNUSWAMY THOMAS ; MAYER STEVEN ; BRELING PATRICK ; REID JONATHAN ; BUCKALEW BRYAN ; IBARRETA GLENN ; PARK SEYANG ; VARADARAJAN SESHASAYEE ; PENNINGTON BRYAN</creatorcontrib><description>An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.</description><language>eng</language><subject>APPARATUS THEREFOR ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121113&amp;DB=EPODOC&amp;CC=US&amp;NR=8308931B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20121113&amp;DB=EPODOC&amp;CC=US&amp;NR=8308931B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HE ZHIAN</creatorcontrib><creatorcontrib>PONNUSWAMY THOMAS</creatorcontrib><creatorcontrib>MAYER STEVEN</creatorcontrib><creatorcontrib>BRELING PATRICK</creatorcontrib><creatorcontrib>REID JONATHAN</creatorcontrib><creatorcontrib>BUCKALEW BRYAN</creatorcontrib><creatorcontrib>IBARRETA GLENN</creatorcontrib><creatorcontrib>PARK SEYANG</creatorcontrib><creatorcontrib>VARADARAJAN SESHASAYEE</creatorcontrib><creatorcontrib>PENNINGTON BRYAN</creatorcontrib><title>Method and apparatus for electroplating</title><description>An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.</description><subject>APPARATUS THEREFOR</subject><subject>CHEMISTRY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFD3TS3JyE9RSMwD4oKCxKLEktJihbT8IoXUnNTkkqL8gpzEksy8dB4G1rTEnOJUXijNzaDg5hri7KGbWpAfn1pckJicmpdaEh8abGFsYGFpbOhkZEyEEgBlLyfp</recordid><startdate>20121113</startdate><enddate>20121113</enddate><creator>HE ZHIAN</creator><creator>PONNUSWAMY THOMAS</creator><creator>MAYER STEVEN</creator><creator>BRELING PATRICK</creator><creator>REID JONATHAN</creator><creator>BUCKALEW BRYAN</creator><creator>IBARRETA GLENN</creator><creator>PARK SEYANG</creator><creator>VARADARAJAN SESHASAYEE</creator><creator>PENNINGTON BRYAN</creator><scope>EVB</scope></search><sort><creationdate>20121113</creationdate><title>Method and apparatus for electroplating</title><author>HE ZHIAN ; PONNUSWAMY THOMAS ; MAYER STEVEN ; BRELING PATRICK ; REID JONATHAN ; BUCKALEW BRYAN ; IBARRETA GLENN ; PARK SEYANG ; VARADARAJAN SESHASAYEE ; PENNINGTON BRYAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8308931B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>APPARATUS THEREFOR</topic><topic>CHEMISTRY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><toplevel>online_resources</toplevel><creatorcontrib>HE ZHIAN</creatorcontrib><creatorcontrib>PONNUSWAMY THOMAS</creatorcontrib><creatorcontrib>MAYER STEVEN</creatorcontrib><creatorcontrib>BRELING PATRICK</creatorcontrib><creatorcontrib>REID JONATHAN</creatorcontrib><creatorcontrib>BUCKALEW BRYAN</creatorcontrib><creatorcontrib>IBARRETA GLENN</creatorcontrib><creatorcontrib>PARK SEYANG</creatorcontrib><creatorcontrib>VARADARAJAN SESHASAYEE</creatorcontrib><creatorcontrib>PENNINGTON BRYAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HE ZHIAN</au><au>PONNUSWAMY THOMAS</au><au>MAYER STEVEN</au><au>BRELING PATRICK</au><au>REID JONATHAN</au><au>BUCKALEW BRYAN</au><au>IBARRETA GLENN</au><au>PARK SEYANG</au><au>VARADARAJAN SESHASAYEE</au><au>PENNINGTON BRYAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method and apparatus for electroplating</title><date>2012-11-13</date><risdate>2012</risdate><abstract>An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.</abstract><oa>free_for_read</oa></addata></record>
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subjects APPARATUS THEREFOR
CHEMISTRY
ELECTROFORMING
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS
title Method and apparatus for electroplating
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-30T15%3A49%3A19IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=HE%20ZHIAN&rft.date=2012-11-13&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8308931B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true