Method and apparatus for electroplating
An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second catho...
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creator | HE ZHIAN PONNUSWAMY THOMAS MAYER STEVEN BRELING PATRICK REID JONATHAN BUCKALEW BRYAN IBARRETA GLENN PARK SEYANG VARADARAJAN SESHASAYEE PENNINGTON BRYAN |
description | An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect. |
format | Patent |
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The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.</description><language>eng</language><subject>APPARATUS THEREFOR ; CHEMISTRY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121113&DB=EPODOC&CC=US&NR=8308931B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121113&DB=EPODOC&CC=US&NR=8308931B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HE ZHIAN</creatorcontrib><creatorcontrib>PONNUSWAMY THOMAS</creatorcontrib><creatorcontrib>MAYER STEVEN</creatorcontrib><creatorcontrib>BRELING PATRICK</creatorcontrib><creatorcontrib>REID JONATHAN</creatorcontrib><creatorcontrib>BUCKALEW BRYAN</creatorcontrib><creatorcontrib>IBARRETA GLENN</creatorcontrib><creatorcontrib>PARK SEYANG</creatorcontrib><creatorcontrib>VARADARAJAN SESHASAYEE</creatorcontrib><creatorcontrib>PENNINGTON BRYAN</creatorcontrib><title>Method and apparatus for electroplating</title><description>An apparatus for electroplating a layer of metal on the surface of a wafer includes an ionically resistive ionically permeable element located in close proximity of the wafer (preferably within 5 mm of the wafer surface) which serves to modulate ionic current at the wafer surface, and a second cathode configured to divert a portion of current from the wafer surface. The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. 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The ionically resistive ionically permeable element in a preferred embodiment is a disk made of a resistive material having a plurality of perforations formed therein, such that perforations do not form communicating channels within the body of the disk. The provided configuration effectively redistributes ionic current in the plating system allowing plating of uniform metal layers and mitigating the terminal effect.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS THEREFOR CHEMISTRY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS |
title | Method and apparatus for electroplating |
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