Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device

A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a pola...

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Hauptverfasser:	YOO CHANG-EUN, SHIM JEO-YOUNG, YOO KYU-TAE, CHUNG WON-SEOK, CHO YEON-JA, LEE KYU-SANG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	YOO CHANG-EUN SHIM JEO-YOUNG YOO KYU-TAE CHUNG WON-SEOK CHO YEON-JA LEE KYU-SANG
description	A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US8293591B2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US8293591B2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US8293591B23</originalsourceid><addsrcrecordid>eNqNjrEOgjAURVkcjPoP7wNwEGIiq0birs6kaV_hJaWvaQsJ3-rPCOrgQKLTHe65J3eZPEpCowC1RhkhemEDhcgeJLfOUyBbQ80jYcSAPoWWpGdtOlIkQWFPEr_R2CDoeWMKwipoMTasgPU4jiMwjYQVZogIjejfDmIDtefOQffL-pJO_cyxdbLQwgTcfHKVQHm-nS5bdFxhcEKixVjdr4esyPfF7pjlfyBPQ4pr9Q</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device</title><source>esp@cenet</source><creator>YOO CHANG-EUN ; SHIM JEO-YOUNG ; YOO KYU-TAE ; CHUNG WON-SEOK ; CHO YEON-JA ; LEE KYU-SANG</creator><creatorcontrib>YOO CHANG-EUN ; SHIM JEO-YOUNG ; YOO KYU-TAE ; CHUNG WON-SEOK ; CHO YEON-JA ; LEE KYU-SANG</creatorcontrib><description>A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121023&DB=EPODOC&CC=US&NR=8293591B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,777,882,25545,76296</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20121023&DB=EPODOC&CC=US&NR=8293591B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YOO CHANG-EUN</creatorcontrib><creatorcontrib>SHIM JEO-YOUNG</creatorcontrib><creatorcontrib>YOO KYU-TAE</creatorcontrib><creatorcontrib>CHUNG WON-SEOK</creatorcontrib><creatorcontrib>CHO YEON-JA</creatorcontrib><creatorcontrib>LEE KYU-SANG</creatorcontrib><title>Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device</title><description>A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjrEOgjAURVkcjPoP7wNwEGIiq0birs6kaV_hJaWvaQsJ3-rPCOrgQKLTHe65J3eZPEpCowC1RhkhemEDhcgeJLfOUyBbQ80jYcSAPoWWpGdtOlIkQWFPEr_R2CDoeWMKwipoMTasgPU4jiMwjYQVZogIjejfDmIDtefOQffL-pJO_cyxdbLQwgTcfHKVQHm-nS5bdFxhcEKixVjdr4esyPfF7pjlfyBPQ4pr9Q</recordid><startdate>20121023</startdate><enddate>20121023</enddate><creator>YOO CHANG-EUN</creator><creator>SHIM JEO-YOUNG</creator><creator>YOO KYU-TAE</creator><creator>CHUNG WON-SEOK</creator><creator>CHO YEON-JA</creator><creator>LEE KYU-SANG</creator><scope>EVB</scope></search><sort><creationdate>20121023</creationdate><title>Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device</title><author>YOO CHANG-EUN ; SHIM JEO-YOUNG ; YOO KYU-TAE ; CHUNG WON-SEOK ; CHO YEON-JA ; LEE KYU-SANG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8293591B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YOO CHANG-EUN</creatorcontrib><creatorcontrib>SHIM JEO-YOUNG</creatorcontrib><creatorcontrib>YOO KYU-TAE</creatorcontrib><creatorcontrib>CHUNG WON-SEOK</creatorcontrib><creatorcontrib>CHO YEON-JA</creatorcontrib><creatorcontrib>LEE KYU-SANG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YOO CHANG-EUN</au><au>SHIM JEO-YOUNG</au><au>YOO KYU-TAE</au><au>CHUNG WON-SEOK</au><au>CHO YEON-JA</au><au>LEE KYU-SANG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device</title><date>2012-10-23</date><risdate>2012</risdate><abstract>A field effect transistor for detecting an analyte having a thiol group includes a substrate, a source region and a drain region formed apart from each other on the substrate, the source region and the drain region being doped such that a polarity of the source and drain region is opposite to a polarity of the substrate, a channel region disposed between the source region and the drain region, an insulating layer formed of an electrically insulating material and disposed on the channel region, a gold layer disposed on the insulating layer and a reference electrode disposed apart from the gold layer.</abstract><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US8293591B2
source	esp@cenet
subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	Field effect transistor comprising gold layer, microfluidic device comprising the field effect transistor, and method of detecting analyte having thiol group using the field effect transistor and the microfluidic device
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T11%3A32%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=YOO%20CHANG-EUN&rft.date=2012-10-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS8293591B2%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true