High voltage power integrated circuit

A high performance, power integrated circuit composed of two charge balanced, extended drain NMOS transistors (CBDEMOS) formed on an n-substrate. A CBDENMOS transistor with an n-type substrate source. A charge balanced channel diode (CBCD) with an n-type substrate. A process for forming a high perfo...

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Hauptverfasser:	MOLLOY SIMON JOHN, LIN HAIAN, PEARCE CHARLES WALTER, NEILSON JOHN MANNING SAVIDGE, KOCON CHRISTOPHER BOGUSLAW
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	MOLLOY SIMON JOHN LIN HAIAN PEARCE CHARLES WALTER NEILSON JOHN MANNING SAVIDGE KOCON CHRISTOPHER BOGUSLAW
description	A high performance, power integrated circuit composed of two charge balanced, extended drain NMOS transistors (CBDEMOS) formed on an n-substrate. A CBDENMOS transistor with an n-type substrate source. A charge balanced channel diode (CBCD) with an n-type substrate. A process for forming a high performance, power integrated circuit composed of two CBDENMOS transistors formed on an n-substrate. A process for forming a power integrated circuit composed of one CBDENMOS transistor and one CBCD on an n-type substrate.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	High voltage power integrated circuit
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