Wafer level hermetic bond using metal alloy with keeper layer
Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on th...
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| creator | THOMPSON DOUGLAS L FOSTER JOHN S PARANJPYE ALOK |
| description | Systems and methods for forming an encapsulated device include a hermetic seal which seals an insulating environment between two substrates, one of which supports the device. The hermetic seal is formed by an alloy of two metal layers, one deposited on a first substrate and the other deposited on the second substrate. At least one of the substrates may include a raised feature formed under at least one of the metal layers. One of the metal layer may have a diffusion barrier layer and a keeper layer formed thereover, wherein the keeper layers keeps the metal confined to a particular area. By using such a keeper layer, the substrate components may be heated to clean their surfaces, without activating or spending the bonding mechanism. |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS SEMICONDUCTOR DEVICES TRANSPORTING |
| title | Wafer level hermetic bond using metal alloy with keeper layer |
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