Conversion LED
A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation...
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| creator | FIEDLER TIM ZACHAU MARTIN HIRRLE RENATE JERMANN FRANK BERBEN DIRK HUBER GUENTER |
| description | A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5. |
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The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2012</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120814&DB=EPODOC&CC=US&NR=8242528B2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20120814&DB=EPODOC&CC=US&NR=8242528B2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>FIEDLER TIM</creatorcontrib><creatorcontrib>ZACHAU MARTIN</creatorcontrib><creatorcontrib>HIRRLE RENATE</creatorcontrib><creatorcontrib>JERMANN FRANK</creatorcontrib><creatorcontrib>BERBEN DIRK</creatorcontrib><creatorcontrib>HUBER GUENTER</creatorcontrib><title>Conversion LED</title><description>A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2012</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZOBzzs8rSy0qzszPU_BxdeFhYE1LzClO5YXS3AwKbq4hzh66qQX58anFBYnJqXmpJfGhwRZGJkamRhZORsZEKAEABIYd4A</recordid><startdate>20120814</startdate><enddate>20120814</enddate><creator>FIEDLER TIM</creator><creator>ZACHAU MARTIN</creator><creator>HIRRLE RENATE</creator><creator>JERMANN FRANK</creator><creator>BERBEN DIRK</creator><creator>HUBER GUENTER</creator><scope>EVB</scope></search><sort><creationdate>20120814</creationdate><title>Conversion LED</title><author>FIEDLER TIM ; ZACHAU MARTIN ; HIRRLE RENATE ; JERMANN FRANK ; BERBEN DIRK ; HUBER GUENTER</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US8242528B23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2012</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>FIEDLER TIM</creatorcontrib><creatorcontrib>ZACHAU MARTIN</creatorcontrib><creatorcontrib>HIRRLE RENATE</creatorcontrib><creatorcontrib>JERMANN FRANK</creatorcontrib><creatorcontrib>BERBEN DIRK</creatorcontrib><creatorcontrib>HUBER GUENTER</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>FIEDLER TIM</au><au>ZACHAU MARTIN</au><au>HIRRLE RENATE</au><au>JERMANN FRANK</au><au>BERBEN DIRK</au><au>HUBER GUENTER</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Conversion LED</title><date>2012-08-14</date><risdate>2012</risdate><abstract>A conversion LED is provided. The conversion LED may include a primary light source which emits in the short-wave radiation range below 420 nm, and a luminophore placed in front of it consisting of the BAM system as a host lattice for at least partial conversion of the light source's radiation into longer-wave radiation, wherein the BAM luminophore is applied as a thin layer having a thickness of at most 50 μm directly on the surface of the light source, the BAM luminophore having the general stoichiometry (M1−r Mgr)O*k(Al2O3), where r=0.4 to 0.6 and M=EAeEu1−e, with EA=Ba, Sr, Ca, and e=0.52 to 0.8, and k=1.5 to 4.5.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | Conversion LED |
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