Replacement-gate-compatible programmable electrical antifuse

After planarization of a gate level dielectric layer, a dummy structure is removed to form a recess. A first conductive material layer and an amorphous metal oxide are deposited into the recess area. A second conduct material layer fills the recess. After planarization, an electrical antifuse is for...

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Bibliographische Detailangaben

Hauptverfasser:	GUO DECHAO, CHAKRAVARTI SATYA N, MIN BYOUNG W, RAJEEVAKUMAR THEKKEMADATHIL V, WONG KEITH KWONG HON, LE CHUCK T
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY MEASURING MEASURING ELECTRIC VARIABLES MEASURING MAGNETIC VARIABLES PHYSICS SEMICONDUCTOR DEVICES TESTING
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