Trench MOS transistor and method of manufacturing the same

Provided is a semiconductor device formed with a trench portion for providing a concave portion having a continually varying depth in a gate width direction and with a gate electrode provided within the trench portion and on a top surface thereof via a gate insulating film. Before the formation of t...

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Bibliographische Detailangaben

1. Verfasser:	HASHITANI MASAYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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