Trench MOS transistor and method of manufacturing the same

Trench MOS transistor and method of manufacturing the same

Provided is a semiconductor device formed with a trench portion for providing a concave portion having a continually varying depth in a gate width direction and with a gate electrode provided within the trench portion and on a top surface thereof via a gate insulating film. Before the formation of t...

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1. Verfasser: HASHITANI MASAYUKI
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator HASHITANI MASAYUKI
description Provided is a semiconductor device formed with a trench portion for providing a concave portion having a continually varying depth in a gate width direction and with a gate electrode provided within the trench portion and on a top surface thereof via a gate insulating film. Before the formation of the gate electrode, an impurity is added to at least a part of the source region and the drain region by ion implantation from an inner wall of the trench portion, and then heat treatment is performed for diffusion and activation to form a diffusion region from the surface of the trench portion down to a bottom portion thereof. Current flowing through a top surface of the concave portion of the gate electrode at high concentration can flow uniformly through the entire trench portion.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title Trench MOS transistor and method of manufacturing the same
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