Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) f...
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| creator | SCHRICKER APRIL HERNER BRAD KONEVECKI MICHAEL W |
| description | In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided. |
| format | Patent |
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| subjects | ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES |
| title | Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same |
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