Semiconductor device

In a semiconductor device having a pn-junction diode structure that includes anode diffusion region including edge area, anode electrode on anode diffusion region, and insulator film on edge area of anode diffusion region, the area of anode electrode above anode diffusion region with insulator film...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NEMOTO MICHIO, YAMAZAKI TOMOYUKI, KAKEFU MITUHIRO, KAWANO RYOUICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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