Semiconductor device having IGBT and diode

A semiconductor device includes: a substrate; an active element cell area including IGBT cell region and a diode cell region; a first semiconductor region on a first side of the substrate in the active element cell area; a second semiconductor region on a second side of the substrate in the IGBT cel...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KOUNO KENJI, TSUZUKI YUKIO
Format: Patent
Sprache:eng
Schlagworte:
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