Systems and methods for reducing contact to gate shorts

A method for reducing contact to gate shorts in a semiconductor device and the resulting semiconductor device are described. In one embodiment, a gate is formed on a substrate, a contact is formed on the gate and the substrate, and an insulator is formed between the gate and the contact. The insulat...

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1. Verfasser: RAHHAL-ORABI NADIA
Format: Patent
Sprache:eng
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